Nexperia PMZB320UPE

Nexperia · FETs & Power MOSFETs · MPN PMZB320UPE

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Specifications

Gate Charge(Qg)1.4nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)510mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)122pF

Technical details

30V 1A 700mV 350mW 510mΩ@4.5V 1 P-Channel SOT-883-3 Single FETs, MOSFETs RoHS

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