Nexperia PMZB200UNEYL

Nexperia · FETs & Power MOSFETs · MPN PMZB200UNEYL

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Specifications

Gate Charge(Qg)2.7nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)250mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)89pF

Technical details

N-Channel 30V 1.4A 350mW Surface Mount SOT-883-3

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