Nexperia PMZB200UNE315

Nexperia · FETs & Power MOSFETs · MPN PMZB200UNE315

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)2.7nC@4.5V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation760mW
RDS(on)250mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)9pF
Input Capacitance(Ciss)89pF
TypeN-Channel

Technical details

30V 1.4A 950mV 760mW 250mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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