Nexperia PMZ1000UN,315

Nexperia · FETs & Power MOSFETs · MPN PMZ1000UN,315

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Specifications

Gate Charge(Qg)890pC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)480mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)43pF

Technical details

N-Channel 30V 480mA 350mW Surface Mount SOT-883

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