Nexperia · FETs & Power MOSFETs · MPN PMXB65UPEZ
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| Gate Charge(Qg) | 12nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 680mV |
| Pd - Power Dissipation | 317mW |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF |
| RDS(on) | 59mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 634pF |
P-Channel 12V 3.2A 317mW Surface Mount DFN1010D-3