Nexperia · FETs & Power MOSFETs · MPN PMXB65ENEZ
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 44mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 295pF |
30V 3.2A 1.4V 400mW 44mΩ@10V 1 N-channel SOT1215 Single FETs, MOSFETs RoHS