Nexperia · FETs & Power MOSFETs · MPN PMXB65ENE147
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 11nC@10V |
| Current - Continuous Drain(Id) | 3.2A |
| Output Capacitance(Coss) | 40pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 67mΩ@10V |
| Input Capacitance(Ciss) | 295pF |
| Type | N-Channel |
30V 3.2A 2V 400mW 67mΩ@10V N-Channel DFN1010D-3 Single FETs, MOSFETs RoHS