Nexperia · FETs & Power MOSFETs · MPN PMXB360ENEAZ
No reviews yet — be the first to review Nexperia PMXB360ENEAZ.
| Gate Charge(Qg) | 4.5nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 345mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 130pF |
N-Channel 80V 1.1A 400mW Surface Mount DFN1010D-3