Nexperia PMXB360ENEA147

Nexperia · FETs & Power MOSFETs · MPN PMXB360ENEA147

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Specifications

Gate Charge(Qg)4.5nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)1.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation1.07W
RDS(on)450mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)11pF
Input Capacitance(Ciss)130pF
TypeN-Channel

Technical details

80V 1.1A 2.7V 1.07W 450mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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