Nexperia · FETs & Power MOSFETs · MPN PMXB350UPEZ
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| Gate Charge(Qg) | 2.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 360mW;5.68W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 447mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 116pF |
20V 1.2A 447mΩ@4.5V 1 P-Channel DFN1010-3 Single FETs, MOSFETs RoHS