Nexperia · FETs & Power MOSFETs · MPN PMX800ENEZ
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| Output Capacitance(Coss) | 4pF |
|---|---|
| Pd - Power Dissipation | 500mW |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 600pC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 32pF |
500mW 60V 1.6V 800mΩ@10V 1 N-channel N-Channel DFN0603-3 Single FETs, MOSFETs RoHS