Nexperia PMV65XPEA

Nexperia · FETs & Power MOSFETs · MPN PMV65XPEA

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Specifications

Gate Charge(Qg)5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation890mW
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)67mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)618pF
TypeP-Channel

Technical details

P-Channel 20V 890mW TOSOT-23236AB

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