Nexperia PMV65ENEAR

Nexperia · FETs & Power MOSFETs · MPN PMV65ENEAR

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation940mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)160pF
TypeN-Channel

Technical details

N-Channel 40V 2.7A 940mW Surface Mount SOT-23

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