Nexperia PMV55ENEAR

Nexperia · FETs & Power MOSFETs · MPN PMV55ENEAR

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation1.19W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)646pF
TypeN-Channel

Technical details

N-Channel 60V 3.1A 1.19W Surface Mount SOT-23

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