Nexperia · FETs & Power MOSFETs · MPN PMV55ENEA,215
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Configuration | - |
| Current - Continuous Drain(Id) | 3.1A |
| Output Capacitance(Coss) | 49pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 8.36W |
| RDS(on) | 60mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Input Capacitance(Ciss) | 646pF |
| Type | N-Channel |
60V 3.1A 2.7V 8.36W 60mΩ@10V N-Channel Single FETs, MOSFETs RoHS