Nexperia · FETs & Power MOSFETs · MPN PMV50ENEAR
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 510mW;3.9W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 43mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 276pF |
30V 3.9A 2.5V 43mΩ@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS