Nexperia PMV45EN2R

Nexperia · FETs & Power MOSFETs · MPN PMV45EN2R

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Specifications

Gate Charge(Qg)6.3nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.115W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)42mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)209pF

Technical details

N-Channel 30V 5.1A 1115mW Surface Mount SOT-23

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