Nexperia PMV35EPER

Nexperia · FETs & Power MOSFETs · MPN PMV35EPER

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Specifications

Gate Charge(Qg)19.2nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)134pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation6.95W
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)45mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)793pF
TypeP-Channel

Technical details

P-Channel 30V 4.2A 6.95W Surface Mount TO-236AB

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