Nexperia · FETs & Power MOSFETs · MPN PMV32UP/MI215
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 15.5nC@4.5V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 175pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Pd - Power Dissipation | 930mW |
| RDS(on) | 36mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 112pF |
| Input Capacitance(Ciss) | 1.89nF |
| Type | P-Channel |
20V 4A 950mV 930mW 36mΩ@4.5V P-Channel Single FETs, MOSFETs RoHS