Nexperia PMV100XPEA215

Nexperia · FETs & Power MOSFETs · MPN PMV100XPEA215

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Specifications

Gate Charge(Qg)6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)54pF
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.25V
Pd - Power Dissipation1.06W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)128mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)386pF
TypeP-Channel

Technical details

20V 2.4A 1.25V 1.06W 128mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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