Nexperia · FETs & Power MOSFETs · MPN PMT560ENEAX
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| Gate Charge(Qg) | 4.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 1.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 715mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 112pF |
N-Channel 100V 1.1A 1.9W Surface Mount SOT-223