Nexperia PMT200EPEX

Nexperia · FETs & Power MOSFETs · MPN PMT200EPEX

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Specifications

Gate Charge(Qg)15.9nC@10V
Drain to Source Voltage70V
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)167mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)822pF

Technical details

P-Channel 70V 2.4A 800mW Surface Mount SOT-223

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