Nexperia PMT200EPEA115

Nexperia · FETs & Power MOSFETs · MPN PMT200EPEA115

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Specifications

Drain to Source Voltage70V
Gate Charge(Qg)15.9nC@10V
Output Capacitance(Coss)47pF
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation8.3W
RDS(on)167mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)31.5pF
Input Capacitance(Ciss)822pF
TypeP-Channel

Technical details

70V 2.4A 3V 8.3W 167mΩ@10V P-Channel Single FETs, MOSFETs RoHS

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