Nexperia · FETs & Power MOSFETs · MPN PMT200EPEA115
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| Drain to Source Voltage | 70V |
|---|---|
| Gate Charge(Qg) | 15.9nC@10V |
| Output Capacitance(Coss) | 47pF |
| Current - Continuous Drain(Id) | 2.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 8.3W |
| RDS(on) | 167mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 31.5pF |
| Input Capacitance(Ciss) | 822pF |
| Type | P-Channel |
70V 2.4A 3V 8.3W 167mΩ@10V P-Channel Single FETs, MOSFETs RoHS