Nexperia PMR780SN115

Nexperia · FETs & Power MOSFETs · MPN PMR780SN115

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Specifications

Gate Charge(Qg)1.05nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)550mA
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation530mW
Reverse Transfer Capacitance (Crss@Vds)3.5pF
RDS(on)920mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)23pF
TypeN-Channel

Technical details

60V 550mA 3V 530mW 920mΩ@10V 1 N-channel N-Channel SC-75 Single FETs, MOSFETs RoHS

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