Nexperia PMPB85ENEAX

Nexperia · FETs & Power MOSFETs · MPN PMPB85ENEAX

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Specifications

Gate Charge(Qg)9.2nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation1.6W;15.6W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)305pF

Technical details

N-Channel 60V 3A 1.6W 15.6W Surface Mount DFN2020-6

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