Nexperia · FETs & Power MOSFETs · MPN PMPB85ENEA115
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 9.2nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
60V 4.4A 2.7V 1.6W 95mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS