Nexperia · FETs & Power MOSFETs · MPN PMPB55ENEAX
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 1.65W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 56mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 435pF |
N-Channel 60V 4A 1.65W Surface Mount SOT1220