Nexperia PMPB27EP,115

Nexperia · FETs & Power MOSFETs · MPN PMPB27EP,115

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.7W;12.5W
RDS(on)29mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.57nF

Technical details

P-Channel 30V 6.1A 1.7W 12.5W Surface Mount DFN2020MD-6

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