Nexperia · FETs & Power MOSFETs · MPN PMPB25ENEA115
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 17nC@4.5V |
| Current - Continuous Drain(Id) | 10.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 112pF |
| RDS(on) | 22mΩ@4.5V |
| Input Capacitance(Ciss) | 1.136nF |
| Type | N-Channel |
20V 10.1A 900mV 1.7W 22mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS