Nexperia · FETs & Power MOSFETs · MPN PMPB215ENEA,115
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| Gate Charge(Qg) | 7.2nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 230mΩ@10V |
| Input Capacitance(Ciss) | 215pF |
| Type | N-Channel |
80V 1.9A 2.7V 1.6W 230mΩ@10V N-Channel Single FETs, MOSFETs RoHS