Nexperia PMPB20XPEZ

Nexperia · FETs & Power MOSFETs · MPN PMPB20XPEZ

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Specifications

Gate Charge(Qg)45nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)10.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)23.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.945nF

Technical details

20V 10.3A 900mV 1.7W 23.5mΩ@4.5V 1 P-Channel DFN2020-6 Single FETs, MOSFETs RoHS

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