Nexperia PMPB20XNEAZ

Nexperia · FETs & Power MOSFETs · MPN PMPB20XNEAZ

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Specifications

Gate Charge(Qg)9.9nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation460mW
Reverse Transfer Capacitance (Crss@Vds)3.1pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)930pF

Technical details

20V 7.5A 1V 460mW 16mΩ@4.5V 1 N-channel SOT1220 Single FETs, MOSFETs RoHS

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