Nexperia PMPB19XP,115

Nexperia · FETs & Power MOSFETs · MPN PMPB19XP,115

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Specifications

Gate Charge(Qg)43.2nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)7.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.7W;12.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)22.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.89nF

Technical details

P-Channel 20V 7.2A 1.7W 12.5W Surface Mount DFN2020-6

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