Nexperia PMPB16XNEA115

Nexperia · FETs & Power MOSFETs · MPN PMPB16XNEA115

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7.2nC@4.5V
Current - Continuous Drain(Id)10.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)775pF

Technical details

30V 10.3A 1V 1.7W 16mΩ@4.5V 1 N-channel Single FETs, MOSFETs RoHS

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