Nexperia · FETs & Power MOSFETs · MPN PMPB10XNEAX
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| Gate Charge(Qg) | 34nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF |
| RDS(on) | 10mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.175nF |
20V 9A 900mV 1.7W 10mΩ@4.5V 1 N-channel DFN2020-6 Single FETs, MOSFETs RoHS