Nexperia PMPB10ENZ

Nexperia · FETs & Power MOSFETs · MPN PMPB10ENZ

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Specifications

Gate Charge(Qg)20.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.8W;12.5W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)840pF

Technical details

30V 14A 1.5V 12mΩ@10V 1 N-channel DFN2020-6 Single FETs, MOSFETs RoHS

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