Nexperia PMPB100ENEA115

Nexperia · FETs & Power MOSFETs · MPN PMPB100ENEA115

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Specifications

Gate Charge(Qg)5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)5.1A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
RDS(on)72mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)27pF
Input Capacitance(Ciss)157pF
TypeN-Channel

Technical details

30V 5.1A 2.5V 2W 72mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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