Nexperia PMPB08R4VPX

Nexperia · FETs & Power MOSFETs · MPN PMPB08R4VPX

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Specifications

Gate Charge(Qg)27nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)509pF
Current - Continuous Drain(Id)16.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)454pF
RDS(on)9.6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.2nF
TypeP-Channel

Technical details

P-Channel 12V 16.7A 1.9W Surface Mount DFN2020MD-6

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