Nexperia PMN55ENEX

Nexperia · FETs & Power MOSFETs · MPN PMN55ENEX

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation560mW;6.25W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)646pF

Technical details

N-Channel 60V 4.5A 560mW 6.25W Surface Mount SOT-457

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