Nexperia · FETs & Power MOSFETs · MPN PMN55ENEX
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 560mW;6.25W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 646pF |
N-Channel 60V 4.5A 560mW 6.25W Surface Mount SOT-457