Nexperia PMN55ENEH

Nexperia · FETs & Power MOSFETs · MPN PMN55ENEH

No reviews yet — be the first to review Nexperia PMN55ENEH.

Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation560mW;6.25W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)646pF
TypeN-Channel

Technical details

N-Channel 60V 4.5A 560mW 6.25W Surface Mount SOT-457

Related FETs & Power MOSFETs