Nexperia PMN55ENEAX

Nexperia · FETs & Power MOSFETs · MPN PMN55ENEAX

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Specifications

Gate Charge(Qg)13.2nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation7.5W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)46mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)450pF

Technical details

N-Channel 60V 3.6A 7.5W Surface Mount SOT-457

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