Nexperia · FETs & Power MOSFETs · MPN PMN52XP115
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 12nC@4.5V |
| Output Capacitance(Coss) | 68pF |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.24W |
| RDS(on) | 62mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| Input Capacitance(Ciss) | 763pF |
| Type | P-Channel |
20V 4.7A 900mV 1.24W 62mΩ@4.5V P-Channel Single FETs, MOSFETs RoHS