Nexperia · FETs & Power MOSFETs · MPN PMN40ENEX
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 530mW;4.46W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 38mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 294pF |
30V 5.7A 2V 38mΩ@10V 1 N-channel SOT-457 Single FETs, MOSFETs RoHS