Nexperia PMN30UN115

Nexperia · FETs & Power MOSFETs · MPN PMN30UN115

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@4.5V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.24W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)40mΩ@4.5V
Input Capacitance(Ciss)635pF
TypeN-Channel

Technical details

30V 4.5A 900mV 1.24W 40mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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