Nexperia PMN30ENEAX

Nexperia · FETs & Power MOSFETs · MPN PMN30ENEAX

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Specifications

Gate Charge(Qg)11.7nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation667mW
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)440pF

Technical details

N-Channel 40V 5.4A 667mW Surface Mount SOT-457

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