Nexperia PMN280ENEAX

Nexperia · FETs & Power MOSFETs · MPN PMN280ENEAX

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Specifications

Gate Charge(Qg)6.8nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)1.2A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation667mW;7.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)385mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)190pF

Technical details

N-Channel 100V 1.2A 667mW 7.5W Surface Mount SOT-457

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