Nexperia PMN27XPE115

Nexperia · FETs & Power MOSFETs · MPN PMN27XPE115

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)22.5nC@4.5V
Output Capacitance(Coss)254pF
Current - Continuous Drain(Id)4.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.25V
Pd - Power Dissipation8.33W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)30mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.77nF
TypeP-Channel

Technical details

20V 4.4A 1.25V 8.33W 30mΩ@4.5V 1 P-Channel P-Channel TSOP-6 Single FETs, MOSFETs RoHS

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