Nexperia · FETs & Power MOSFETs · MPN PMN25ENEH
No reviews yet — be the first to review Nexperia PMN25ENEH.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 18nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 560mW |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| RDS(on) | 24mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 597pF |
30V 2.5V 560mW 24mΩ 1 N-channel SOT-457 Single FETs, MOSFETs RoHS