Nexperia PMN20ENAX

Nexperia · FETs & Power MOSFETs · MPN PMN20ENAX

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)6.2A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation652mW;7.5W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)582pF

Technical details

N-Channel 40V 6.2A 652mW 7.5W Surface Mount SOT-457

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