Nexperia · FETs & Power MOSFETs · MPN PMN120ENEX
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| Gate Charge(Qg) | 7.4nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 1.4W;6.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 123mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 275pF |
60V 3.1A 2.7V 123mΩ@10V 1 N-channel SOT-457 Single FETs, MOSFETs RoHS